摘要
用离子束溅射方法制备磁性隧道结 (MTJ) .研究MTJ样品的隧道结磁电阻 (TMR)效应 .用X射线光电子能谱分析了MTJ的软、硬磁层和非磁层及其界面的化学组成与微结构 .研究了MTJ的微结构对氧化铝势垒高度与有效宽度和TMR效应的影响 .
Using ion\|beam\|sputtering technique, Fe/Al\-2O\-3/Fe magnetic tunneling junctions (MTJ) were fabricated. Tunneling magnetoresistance (TMR) effect of MTJ samples has been successfully studied. The chemical composition and the microstructural characteristics of hard\|and soft\|magnetic layers, insulating layer, and interface of MTJ were analyzed by X\|ray photoelectron spectroscopy and Atomic force microscopy. The dependence of MR effect on microstructure, chemical composition, conductance, and I V characteristic of the samples are also discussed.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2000年第9期1897-1900,共4页
Acta Physica Sinica
基金
国家 973项目基金!(批准号 :G19990 64 5 0 8)&&
关键词
磁性隧道结
X射线光电子能能谱
半导体
TMR
magnetic tunneling junction, X-ray photoelectron spectroscopy, tunneling magnetoresistance
