新型GaAs/GaAlAs非对称量子阱红外光电导探测器

A NEW TYPE OF ASYMMETRICAL GaAs/GaAlAs QUANTUM WELL INFRARED PHOTOCONDUCTOR 

提出一种新型 Ga As/ Ga Al As子带间光吸收的红外光电导探测机理 ,利用 MOCVD系统进行器件材料的生长 ,研制了 2 0 0μm× 2 0 0μm的台面形式单管 ,测到了明显的红外光电流信号及阱间共振遂穿效应造成的负阻震荡现象 ,对器件的性能测试结果表明 ,器件的光电流响应和信噪比随着阱数增加而增加 ,器件噪声比常规 Ga As/ Ga Al

A new type of mechanism of asymmetrical GaAs/GaAlAs quantum well infrared photoconductor was proposed based on the novel idea of the intersubband transition due to infrared radiation. The detectors with an area of 200μm×200μm grown by MOCVD were fabricated. The peak of negative conductance and large infrared absorption were observed. It was found experimentally that the photocurrent signal and the signal to noise ratio of the detectors increase with the number of the wells, and the noise of the detectors is one order of magnitude smaller than the conventional GaAs/GaAlAs multi quantum well detectors.