超声喷雾热解法一步合成CuInS_2薄膜及其性能研究

ONE-STEP SYNTHESIS AND PROPERTIES OF CuInS_2 FILMS BY ULTRASONIC SPRAY PYROLYSIS

采用超声喷雾热解法在玻璃基底上一步合成富Cu的CuInS2薄膜。研究基底生长温度对CuInS2薄膜相结构、表面形貌、导电性、透光率及禁带宽度的影响。XRD分析表明薄膜的主相为CuInS2,同时存在Cu2S和Au-Cu第二相,薄膜具有沿(112)择优取向生长特性。拉曼分析证明黄铜矿存在CuInS2相、Cu-Au相及Cu2S相。SEM表明薄膜的表面平整、均匀,有较高的致密性。随着生长温度的不断升高,Cu2S衍射强度增强,相含量增加;薄膜结晶性逐渐改善,导电性提高。可见光光谱分析表明薄膜对可见光具有较强的吸收性,禁带宽度为1.43eV。

Cu-rich CuInS2 thin films have been prepared by ultrasonic spray pyrolysis method on heated glass sub- strates. Phase structure, morphology, electrical and optical properties were systematically studied at various sub- strate temperatures. X-ray diffraction showed that the main phase of CuInS2 films is chalcopyrite structure, and the secondary phases are Cu2S and Au-Cu phase. CuInS2 films have a preferential orientation along the （112） direc- tion. The chalcopyrite structure, Cu2S and Au-Cu phase are also confirmed by Raman spectrum. SEM showed that films have smooth surface, homogeneity and compactness. With the increasing of growth temperature, diffraction intensity and phase content of Cu2S phase is gradually increased, and conductivity of CulnS2 films is sharply in- creased. Visible spectrum analysis exhibits that films have a strong absorption in the visible light range, and band gap of CuInS2 films is 1.43eV.