缓冲层对碳纳米管强流脉冲发射特性的影响

Influence of buffer layer on intense pulsed Field emission of Carbon Nanotubes

为了研究缓冲层对碳纳米管薄膜(CNTs)强流脉冲发射特性的影响,采用酞菁铁高温热解方法分别在镀镍和不镀镍硅基底上生长了碳纳米管薄膜(Ni-CNTs和Si-CNTs),镍层采用化学镀方法制备,强流脉冲发射特性采用二极结构在单脉冲下进行测试。实验发现,通过引入镍缓冲层,CNTs的强流脉冲发射能力显著增强。在峰值为～10.4 V/μm的脉冲场强下,平均开启电场强度从Si-CNTs的5.0V/μm下降到Ni-CNTs的4.3V/μm,而峰值发射电流和电流密度从Si-CNTs的70A和3.5 A/cm2升高到Ni-CNTs的162 A和8.1 A/cm2,Ni-CNTs的峰值电流比Si-CNTs提高了1.3倍。

In order to study influence of buffer layer on intense pulsed field emission （IPFE） of carbon nanotube films （CNTs）, CNTs were synthesized on Si substrate with and without electroless plated Ni buffer respectively （Ni- CNTs and Si- CNTs） by pyrolysis of iron phthalocyanine （FePc）. IPFE prop-erties of Si -CNTs and Ni -CNTs were measured with a diode structure in single -pulse mode. It was found that the emission ability of CNTs were improved obviously by introducing Ni buffer layer. The even turn - on field decreased from 5.0V/~m for Si - CNTs to 4.3V/p^m for Ni - CNTs, and the peak emis- sion current and current density increased from 70 A and 3.5 A/cm2 for Si - CNTs to 162 A and 8.1 A/ cm2 for Ni - CNTs at a peak field intensity - 10.4 V/ixm. The peak current of the Ni - CNTs increased by - 131.4% over the Si - CNTs at the same peak electric field.