On the profile of frequency dependent interface states and series resistance in Au/p-InP SBDs prepared with photolithography technique

The frequency dependent of the forward and reverse bias capacitance-voltage(C-V) and conductance-voltage(G/w-V) characteristics of Au/p-InP SBDs have been investigated in the frequency range of 20 kHz-10 MHz and voltage range of 5-5 V at room temperature.The effects of surface states(Nss) and series resistance(Rs) on C-V and G/w-V characteristics have been investigated in detail.The frequency dependent N ss and R s profiles were obtained for various applied bias voltages.The experimental results show that the main electrical parameters of Au/p-InP SBD such as barrier height(ΦB),the density of acceptor concentration(NA),N ss and R s were found strongly frequency and voltage dependent.The values of C and G/w decrease with increasing frequency due to a continuous distribution of N ss localized at the metal/semiconductor(M/S) interface.The effect of R s on C and G is found considerably high especially at high frequencies.Therefore,the high frequencies of the values of C and G were corrected for the effect of R s in the whole measured bias range to obtain the real diode capacitance C c and conductance G c using the Nicollian and Goetzberger technique.The distribution profile of R s-V gives a peak depending on the frequency especially at low frequencies and disappears with increasing frequencies due to the existence of N ss at the M/S interface.

The frequency dependent of the forward and reverse bias capacitance-voltage （C-V） and conductance-voltage （G/w-V） charac- teristics of Au/p-InP SBDs have been investigated in the frequency range of 20 kHz-10 MHz and voltage range of-5 - 5 V at room temperature. The effects of surface states （Nss） and series resistance （R0 on C-V and G/w-V characteristics have been in- vestigated in detail. The frequency dependent Nss and Rs profiles were obtained for various applied bias voltages. The experi- mental results show that the main electrical parameters of Au/p-InP SBD such as barrier height （gOB）, the density of acceptor concentration （NA）, Nss and Rs were found strongly frequency and voltage dependent. The values of C and G/w decrease with increasing frequency due to a continuous distribution of Nss localized at the metal/semiconductor （M/S） interface. The effect of Rs on C and G is found considerably high especially at high frequencies. Therefore, the high frequencies of the values of C and G were corrected for the effect of Rs in the whole measured bias range to obtain the real diode capacitance Cc and conductance Gc using the Nicollian and Goetzberger technique. The distribution profile of Rs-V gives a peak depending on the frequency especially at low frequencies and disappears with increasing frequencies due to the existence of Nss at the M/S interface.