摘要
从理论上对电子辐照在４Ｈ－ＳｉＣ中引入的缺陷数量和各种缺陷能级进行了分析．结果表明，ＥＨ６ 和ＥＨ７ 缺陷能级在４Ｈ－ＳｉＣ中起着有效复合中心的作用．采用ＳＲＨ 模型来估计电子辐照下４Ｈ－ＳｉＣ的少子寿命，并给出了电子辐照下４Ｈ－ＳｉＣ少子寿命损伤系数的模型．结合具体的测量条件，证明了这个模型是合理的．辐照电子对Ｓｉ、ＧａＡｓ 和４Ｈ－ＳｉＣ产生的不同影响展示了在高空。
The total number of defects induced by electron irradiation in 4H\|SiC has been calculated theoretically in this paper.The deep level defect of EH6 EH7 is considered to play the most important role in carrier recombination from the comparison of all kinds of possible electron traps.Base on this analysis,SRH model is used to calculate the minority carrier lifetime of 4H\|SiC irradiated by electrons.And then,a model of the minority carrier lifetime damage constant is presented.The model is proved to be reasonable by good match with experimental data.The different effect of electron irradiation on SiC\,Si and GaAs are also compared.The results show the advantage of SiC device used in space system and in the circumstance of radiation.
关键词
寿命退化模型
电子辐照
碳化硅
Lifetime Damage Model, SiC, Electron Radiation
