摘要
绝缘体上生长的薄单晶硅膜 (SOI)具有良好的横向绝缘、抗辐照、无锁存效应和无寄生电容 ,并能有效地提高硅集成电路的速度和集成度 ,在深亚微米 VL SI技术中 ,具有很大的优势和潜力。本文简单地介绍了 SOI材料的结构特性和制备方法及当前发展状况 ,同时 ,也指出 SOI进一步实用化所需解决的问题及应用前景。
Silicon on insulator(SOI) structure, as a very large scale integrated circuit(VLSI) wafer, has attractive features such as radiationhardening, no parasitic capacitance and latchup effect. In this paper, the characteristics and preparation method of SOI are described. In addition, the problems to be resolved necessary for practical application of SOI are pointed out.
出处
《材料科学与工程》
CSCD
2000年第2期100-104,共5页
Materials Science and Engineering
基金
国家自然科学基金! (6 9776 0 0 6 )
