摘要
A PNPN tunnel field effect transistor（TFET） with a high-k gate dielectric and a low-k fringe dielectric is introduced.The effects of the gate and fringe electric fields on the TFET＇s performance were investigated through two-dimensional simulations.The results showed that a high gate dielectric constant is preferable for enhancing the gate control over the channel,while a low fringe dielectric constant is useful to increase the band-to-band tunneling probability.The TFET device with the proposed structure has good switching characteristics,enhanced on-state current,and high process tolerance.It is suitable for low-power applications and could become a potential substitute in next-generation complementary metal-oxide-semiconductor technology.
A PNPN tunnel field effect transistor（TFET） with a high-k gate dielectric and a low-k fringe dielectric is introduced.The effects of the gate and fringe electric fields on the TFET＇s performance were investigated through two-dimensional simulations.The results showed that a high gate dielectric constant is preferable for enhancing the gate control over the channel,while a low fringe dielectric constant is useful to increase the band-to-band tunneling probability.The TFET device with the proposed structure has good switching characteristics,enhanced on-state current,and high process tolerance.It is suitable for low-power applications and could become a potential substitute in next-generation complementary metal-oxide-semiconductor technology.
基金
Project supported by the State Key Development Program for Basic Research of China(No.2011CBA00602)
the National Natural Science Foundation of China(Nos.60876076,60976013,60820106001)
