摘要
We introduce a novel 2 T P-channel nano-crystal memory structure for low power and high speed embedded non-volatile memory（NVM） applications.By using the band-to-band tunneling-induced hot-electron （BTBTIHE） injection scheme,both high-speed and low power programming can be achieved at the same time. Due to the use of a select transistor,the ＂erased states＂ can be set to below 0 V,so that the periphery HV circuit （high-voltage generating and management） and read-out circuit can be simplified.Good memory cell performance has also been achieved,including a fast program/erase（P/E） speed（a 1.15 V memory window under 10μs program pulse）,an excellent data retention（only 20%charge loss for 10 years）.The data shows that the device has strong potential for future embedded NVM applications.
We introduce a novel 2 T P-channel nano-crystal memory structure for low power and high speed embedded non-volatile memory（NVM） applications.By using the band-to-band tunneling-induced hot-electron （BTBTIHE） injection scheme,both high-speed and low power programming can be achieved at the same time. Due to the use of a select transistor,the ＂erased states＂ can be set to below 0 V,so that the periphery HV circuit （high-voltage generating and management） and read-out circuit can be simplified.Good memory cell performance has also been achieved,including a fast program/erase（P/E） speed（a 1.15 V memory window under 10μs program pulse）,an excellent data retention（only 20%charge loss for 10 years）.The data shows that the device has strong potential for future embedded NVM applications.
基金
Project supported by the National Basic Research Program of China(Nos.2010CB934204,2011CBA00600)
the National Natural Science Foundation of China(Nos.60825403,60676008,60676061)
the Hi-Tech Research and Development Program of China(Nos. 2008AA031403,2009AA03Z306)
