飞秒激光扫描不同温度下的硅片诱导形成微结构的差别

Difference in Microstructures Induced by Femtosecond Laser Scanning on Silicon Surface at Different Temperatures

不同温度下利用钛宝石激光器输出的飞秒激光脉冲(脉宽42fs,中心波长800nm,最大单脉冲能量3.6mJ),通过扫描方式在硅表面诱导产生表面微结构。采用光学显微镜和扫描电镜观察飞秒激光诱导硅表面微结构的形貌,发现不同温度下硅片表面形成的微结构区域和形貌出现明显的差异。根据观测结果,分析比较了不同温度条件下硅材料微结构形成的能量阈值。随着温度升高,形成的微结构区域减小,飞秒激光诱导形成硅表面微结构的能量阈值升高。这对于研究飞秒激光与物质的相互作用有一定的参考价值,也能对将来实现硅表面微结构的制作提供参考。

The formation of laser-induced surface microstructure on silicon under irradiation with femtosecond laser pulses scanning （pulse width 42 fs, center wavelength ^--800 nm, the maximum single pulse energy 3.6 mJ） at different temperatures is described. Scanning electron microscopy （SEM） and optical microscopy are used for observing the morphologies of the surface microstructure on silicon. It is found that the area and the morphologies of the microstructure on silicon both become different. According to the observations, the energy thresholds of producing microstructure on silicon at different temperatures are analyzed and compared. The damaged area of the silicon is reduced while the temperature rising. It is shown that the energy threshold of femtosecond laser ablation silicon surface to produce microstructure increases with the temperature rising. This is valuable for the study on femtosecond laser interaction with matter, and also for the formation of surface microstructure on silicon in the future.