摘要
采用射频磁控溅射工艺,以Al掺杂ZnO(ZAO)陶瓷靶为靶材在石英玻璃基片上制备出具有优良光电性能的ZAO透明导电薄膜,研究了溅射功率对薄膜光电性能的影响。在不同溅射功率条件下制备的ZAO薄膜具有很好的c轴择优取向。较大功率溅射有利于薄膜晶粒尺寸的增大、电阻率降低。ZAO薄膜在可见光区的透过率平均值高达90%以上,受溅射功率影响不大。在340nm-420nm波长附近ZAO薄膜透过率急剧下降,呈现明显的紫外吸收边;高的溅射功率提高了ZAO薄膜的光学带隙宽度。
ZAO transparent conductive thin films with good photoelectrical properties on quartz glass substrate were prepared by RF magnetron sputtering using ZAO ceramic target.The influence of sputtering power on the photoelectrical properties of ZAO films were studied.It was found that all the films deposited under different sputtering power were with preferred c-axis orientation.With the increase of sputtering power,the grain size increases and the resistivity decreases.The average transmissivity of ZAO films is above 90% which is little affected by the sputtering power in the visible range.The transmissivity of ZAO thin films decreased sharply in the vicinity of 340nm ~420nm wavelength,showing a significant UV absorption edge.In addition,the optical band gap width of ZAO thin film is improved by increasing the sputtering power.
出处
《真空》
CAS
2012年第4期55-58,共4页
Vacuum
基金
河南省自然科学基金资助项目(082300440080)
关键词
溅射功率
ZAO薄膜
电阻率
透过率
光学带隙
sputtering power
ZAO film
resistivity
transmissivity
optical band gap
