射频功率对微晶硅薄膜微结构和光电性能的影响

Influence of rf power on the microstructure and photoelectric properties of microcrystalline silicon film

采用射频等离子体增强化学气相沉积(rf-PECVD)技术,在玻璃和硅衬底上沉积微晶硅(μc-Si:H)薄膜。利用拉曼光谱、AFM和电导率测试对不同射频功率下沉积的薄膜的结构特性及光电性能进行分析。研究表明:随着射频功率的增加,薄膜的晶化率和沉积速率也随之增加,而当射频功率增加到一定的程度,晶化率和沉积速率反而减小。薄膜的暗电导率与晶化率的变化情况相对应。

Microcrystalline silicon（μc-Si： H） films were prepared on the glass and silicon substrates by radio frequency plasma enhanced chemical vapor deposition（rf-PECVD） technology,which were characterized by Raman spectroscopy,AFM and conductivity measurement.The results show that the crystalline volume fraction and deposition rate increase with the increase of RF power,but when the rf power increase to a certain extent,the crystalline volume fraction and deposition rate decrease.The sample’s dark conductivity strongly depends on its crystalline volume fraction.