摘要
测量了Ga_2Te_3化合物的^(129m)Te穆斯堡尔谱。考虑了化合物的晶体结构特征等因素,用两组四极分裂谱线(2Q)来对所测得的穆斯堡尔谱进行分析,得出两类Te位置的电场梯度张量的分量值。将本结果与对GaAs单晶注入离子Te的^(129m)Te穆斯堡尔谱的数据相对比,讨论了GaAs中Te原子偏离代位型的来因。
The Mssbauer spectra of ^(129m)Te in compound Ga_2Te_3 have been measured.Considering the crystal structure of this compound,we analysed the M(o|¨)ssba-
uer spectra by fitting the data with a curve of two groups of quadrupole splittings(2Q),and obtained the values of the electric field gradient(EFG) tensors corresponding to two kinds of Te positions.In comparison with two results of ^(125)Te M(o|¨)ssbauer spectra of Ga_2Te_3 previously published by the other authors,our result is coincident with the recent one.We also compared our result with ^(129m)Te M(o|¨)ssbauer spectra of Te implanted in GaAs and discussed the mechanism of the deviation from substitution of Te atoms in GaAs.
出处
《中山大学学报(自然科学版)》
CAS
CSCD
1990年第1期110-114,共5页
Acta Scientiarum Naturalium Universitatis Sunyatseni
基金
荷兰政府教育和科学部
中国国家教委资助项目
关键词
Ga2Te3
穆斯堡尔谱
四极分裂
Mssbauer spectroscopy
gallium telluride
radioactive tellurium
quadrupole split
interaction of atom and vacancy