摘要
Using the finite-element method, the thermal resistances of GaN laser diode devices in a TO 56 package for both epi-up configuration and epi-down configuration are calculated. The effects of various parameters on the thermal characteristics are analysed, and the thicknesses of the AlN submount for both epi-up configuration and epi-down configuration are optimized. The obtained result provides a reference for the parameter selection of the package materials.
Using the finite-element method, the thermal resistances of GaN laser diode devices in a TO 56 package for both epi-up configuration and epi-down configuration are calculated. The effects of various parameters on the thermal characteristics are analysed, and the thicknesses of the AlN submount for both epi-up configuration and epi-down configuration are optimized. The obtained result provides a reference for the parameter selection of the package materials.
基金
Project supported by the National Natural Science Foundation of China (Grant Nos. 60506001,60976045,60836003,60776047,and 61076119)
the National Basic Research Program of China (Grant No. 2007CB936700)
the Funds for Outstanding Yong Researchers from the National Natural Science Foundation of China (Grant No. 60925017)
