一种低温度系数带隙基准电压源

A Low Temperature Coefficient Bandgap Voltage Reference Source

描述了一个具有高电源抑制比和低温度系数的带隙基准电压源电路。基于1阶零温度系数点可调节的结构,通过对不同零温度系数点带隙电压的转换实现低温度系数,并采用了电源波动抑制电路。采用SMIC 0.18μm CMOS工艺,经过Cadence Spectre仿真验证,在-20℃～100℃温度范围内,电压变化范围小于0.5mV,温度系数不超过7×10-6/℃。低频下的电源抑制比为-107dB,在10kHz下,电源抑制比可达到-90dB。整个电路在供电电压大于2.3V时可以实现正常启动,在3.3V电源供电下,电路的功耗约为1.05mW。

A bandgap voltage reference source with high PSRR and low temperature coefficient was presented, in which low temperature coefficient was achieved by Switching between bandgap voltages at different zero-temperature coefficient points, and a power noise rejection circuit was designed. The circuit was simulated with Spectre of Cadence based on SMIC＇s 0.18 /lm CMOS process. Simulation results showed that the circuit had a voltage swing less the 0.5 mV, a max temperature coefficient of 7 × 10^-6/℃ in the temperature range from -20 ℃ to 120 ℃, a PSSR of -107 dB and -90 dB at DC power supply and 10 kHz of AC frequency, respectively. The bandgap reference source could start properly at a supply voltage higher than 2.3 V, and it dissipated 1.05 mW of power from a 3.3 V supply.