基于SON的MOSFET器件及其工艺方法研究

Study on SON-Based MOSFET Device and Its Processing Technologies

超薄体SOI器件能够有效抑制短沟道效应,业界认为在纳米器件时代它有可能取代传统体硅器件。但SOI器件的全局化埋氧层特性会使其产生自加热效应,严重时会导致器件开态电流下降、漏电流增加,从而导致器件可靠性降低。具有局部空洞层或介质层的SON器件及其制备方法已成为纳米器件时代的一个研究热点。阐述了SON器件的基本概念,比较了SON器件和传统体硅器件的电学特性。对SON器件的工艺制备方法进行了全面描述,包括早期的SON器件制备方法、基于MSTS的SON制备方法、气体注入SON制备方法,以及完全自对准SON器件制备方法。详细描述了准自对准气体注入SON器件和完全自对准SON器件制备方法的工艺流程。

Ultra thin SOI device can restrain short channel effect （SCE） effectively, which is regarded as a potential substitute for traditional bulk Si device in nano device era. However, due to its globally buried insulator, SOl device has an obvious limitation, self-heating effect, which results in ion decrease, leakage current increase and device reliability degradation. As a result, SON-based device has become a hot subject due to its localized empty space or insulator in Si. The basic concept of SON device was illustrated, and a comparison of electric property was made between SON device and traditional bulk Si device. Process technologies for SON device was described, including primitive SON device fabrication process, MSTS-based SON, air implanted SON and total self-alignment SON device manufacturing processes. Fabrication processes for half self-alignment air implanted SON and total self- alignment SON device were dealt with in particular.