摘要
介绍了一种超高压锗硅异质结双极晶体管(SiGe HBT)的器件结构及制作工艺。该器件增大了N型赝埋层到有源区的距离,采用厚帽层锗硅基区及低浓度发射区的制作工艺,以提高SiGe HBT的击穿电压;在基区和发射区之间利用快速热处理提高工艺稳定性,并使HBT的电流增益(β)恢复到原来水平,以弥补厚帽层锗硅基区及低发射区浓度造成的电流增益降低。基区断开时,发射区到集电区的击穿电压(BVCEO)提高至10V,晶体管特征频率达到20GHz。
An ultra high voltage SiGe HBT and its fabrication process were investigated. In this structure, the distance between N type buried layer and active area was increased. Thicker SiGe base cap layer and lower emitter doping were adopted in the process to improve breakdown voltage of SiGe HBT. A rapid thermal processing was introduced between base and emitter regions to enhance stability of the process, and to retarget beta of SiGe HBT. BVCEO of the ultra high voltage SiGe HBT was improved to 10 V, and the cut-off frequency reached 20 GHz.
出处
《微电子学》
CAS
CSCD
北大核心
2012年第4期569-571,575,共4页
Microelectronics
基金
国家十二五科技重大专项资助项目(2011ZX02506)
