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忆感器的Simulink模型及其特性分析 被引量:1

Simulink Modeling of Meminductor and Analysis of Its Characteristics
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摘要 忆感器是一种具有记忆功能的非线性电感器。根据忆感器的数学模型,建立了Simulink仿真模型,并由该模型的仿真结果得到关于忆感器的典型特性,验证了模型的有效性。研究了不同参数对忆感器特性的影响。根据该模型,磁控忆感系统的建模也可以采用类似的方法。 Meminductor is a nonlinear inductor with memory function. A Simulink model of meminductor was established based on its mathematical model. Typical characteristics of the meminductor was obtained from Simulink simulation results, which demonstrated effectiveness of the model. Effects of different parameters on characteristics of the meminductor were investigated in particular. Following the proposed model, modeling of flux-controlled meminductive systems could also be worked out using similar ways.
作者 李程 汪晓东
出处 《微电子学》 CAS CSCD 北大核心 2012年第4期584-587,共4页 Microelectronics
关键词 忆感器 模型 SIMULINK Meminduetor Model Simulink
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参考文献11

  • 1CHUA L O. Memristor - the missing circuit element[J]. IEEE Trans Circ Theo, 1971, 18(5) : 507-519.
  • 2DMITRI B S, GREGORY S S, DUNCAN R S, et al. The missing memristor found[J].Nature, 2008, 453 (7191) : 80-83.
  • 3CHUA L O. The introductory talk [C] // Memristor Memristive Syst Symp. Berkeley, CA, USA. 2008: 361-372.
  • 4DI VENTRA M, PERSHIN Y V, CHUA L O. Putting memory into circuit elements., memristors, memcapacitors, and meminductors [J]. Proc IEEE, 2009, 97(8) : 1371-1372.
  • 5MARTINEZ J, DI VENTRA M, PERSHIN Y V. Solid-state memcapaeitor [EB/OL ]. http://arxiv. org/abs/0912. 4921, 2009.
  • 6KREMS M, PERSHIN Y V, DI VENTRA M. Ionic memcapacitive effects in nanopores[EB/OL]. http:// arxiv, org/abs/1001. 0796, 2010.
  • 7BIOLEK D, BIOLEK Z, BIOLKOVA V. SPICE modeling of memristi meminductive systems E Antalya, Turkey. 2009: ve, memcapacitative and [C]//Int Conf ECCTD. 249-252.
  • 8BIOLEK D, BIOLEK Z, BIOLKOVA V. SPICE modeling of memcapacitor [J].Elec Lett, 2010, 46 (7) : 520-522.
  • 9BIOLEK D, BIOLEK Z, BIOLKOVA V. PSPICE modeling of meminductor [J]. Ana Integr Circ SignProcess, 2011, 66(1): 129-137.
  • 10VENTRA M D, PERSHIN Y V, CHUA L O. Circuit elements with memory: memristors, memcapacitors, and meminductors[J]. Proc IEEE, 2009, 97(10)- 1717-1724.

同被引文献11

  • 1Strukov D B, Snider G S, Stewart D R. et al. The missing memristor found [J]. Nature, 2008, 45(12) : 80-83.
  • 2Chua L O. Memristor-the missing circuit element [J]. IEEE Transactions on Circuit Theory, 1971, 18 (5): 507-519.
  • 3Biolek Z, Biolek D, Biolkova V. SPICE model of memristor with nonlinear dopant drift [J]. Radio En- gineering, 2009, 18(2): 210-214.
  • 4Chua L O. The introductory talk[R]. In Memristor Memristive Systems Symposium, University of California, Berkeley, USA, 2008.
  • 5Ventra M D, Pershin Y V, Chua L O. Putting memo- ry into circuit elements: memristors, memcapacitors and meminduetors [C]. Proceedings of the IEEE, 2009, 92(8): 1371-1372.
  • 6Biolek D, Biolek Z, Biolkovd V. PSPICE modeling of meminductor [J]. Ana Integr Circ Sign Process, 2011, 66(1): 129-137.
  • 7Yuriy V Pershin, Massimiliano Di Ventra. Memristive circuits simulate memcapacitors and meminductors [J]. Electronics Letters, 2010,46(7) :517-518.
  • 8胡小方,段书凯,王丽丹,廖晓峰.忆阻器交叉阵列及在图像处理中的应用[J].中国科学:信息科学,2011,41(4):500-512. 被引量:17
  • 9包伯成,史国栋,许建平,刘中,潘赛虎.含两个忆阻器混沌电路的动力学分析[J].中国科学:技术科学,2011,41(8):1135-1142. 被引量:16
  • 10包伯成,胡文,许建平,刘中,邹凌.忆阻混沌电路的分析与实现[J].物理学报,2011,60(12):58-65. 被引量:31

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