应用于中红外波段的阵列化多孔硅一维光子晶体的制备

Fabrication of arrays of one-dimensional porous silicon photonic crystal

首先通过光刻工艺制作了阵列化岛状硅衬底,然后利用交替变换阳极腐蚀电流,通过合理地控制制备参数,适当的热氧化条件,成功地制备了禁带中心位于5μm、6μm、7μm、10μm的阵列化多孔氧化硅一维光子晶体.随后在其表面淀积一层低应力的Si3N4,通过原子力显微镜(AFM)和傅里叶红外反射谱(FTIR)测试证明,沉积Si3N4后该结构仍然具有良好的平整度和较高的反射特性.该阵列结构不但具有较好的隔热和高反射特性,而且岛状的阵列结构可使其与其他器件互联变得简单易行,必将为制备多功能、一体化器件提供有利条件.

With the aid of photolithography, arrays of one-dimensional porous silicon photonic crystals with the middle in- frared mid-gap （h =5、6、7、10 μm） were fabricated successfully by the combination of microelectronic technique and the electrochemical etching method. For practical use, the roughness of the surface was improved by depositing a Si3 N4 thin film with 5000 A. Then their optical and roughness properties were characterized by FTIR and AFM, respectively. As a re- sult of the synergetic effects rendered by heat isolation and high reflection properties, the array of the one-dimensional por- ous silicon photonic crystal exhibits feasibility as the substrate for pyroelectric infrared sensor.