红色Bi_4Ge_3O_(12)晶体在低温下的发光性能

Luminescence of Red Bi_4Ge_3O_(12) Crystal in Low Temperature

用下降法制备了Bi4Ge3O12晶体,发现生长出来的圆柱状晶体外侧呈现淡红色。对红色Bi4Ge3O12晶体进行了低温(至8 K)下的近红外发射光谱及衰减寿命等测试分析。发现低温时(200 K以下)红色Bi4Ge3O12在1 150 nm等波长处有较强的发射峰,强度随温度降低而增强,衰减时间为几百μs。

Red Bi4Ge3O12（BGO） single crystals had been grown by vertical Bridgman（VB） method.The luminescence and decay time in the near infrared（NIR） region were measured at temperature of 8 K.A broad emission band was found at around 1 150 nm at T〈200 K,and the luminescence lifetime was measured to be several hundred microseconds.The decreased temperature led to increased luminescence intensity.