摘要
利用特征矩阵法,研究了光波正入射到光子晶体时,一维光子晶体的带隙结构随周期数的变化。结果表明,对于不含缺陷层的光子晶体,随着光子晶体周期数的增加,光子晶体的带隙宽度变化不大,而带隙率变化明显。对于含缺陷层的光子晶体,在缺陷层两侧周期数相同时,周期数的增加使得光子晶体的"光谱挖孔"效果明显;在其两侧周期数不同时,只有在两边周期数接近时"光谱挖孔"才有一定的效果。
The relationships between the photonic band gap(PBG) of 1D photonic crystals(PCs) and periodic numbers are investigated by means of the Characteristic Matrix Method. The results show that the PBG of PCs without defect layer changes a little and the Gap ratio changes obviously with the increase of periods. With regard to the PCs with defect layer, more periods can result in more obvious effect of "spectral digging" when the periods at both sides of the defect layer are the same. When the periods at both sides are different, the spectral digging effect appears only when the two periods are close to each other.
出处
《红外技术》
CSCD
北大核心
2012年第8期453-457,共5页
Infrared Technology
基金
红外与低温等离子体安徽省重点实验室基金项目
编号:2010A001002D
关键词
特征矩阵
缺陷
周期数
带隙宽度
characteristic matrix, defect, periods, band gap