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CMP设备中抛光垫修整机构的研究 被引量:1

Study on Pad Conditioner in 300mm Silicon Wafer Chemical Mechanical Polishing Equipment
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摘要 介绍了一种新型抛光垫修整机构的功能、结构及运动原理,通过理论计算给出了修整力的计算公式,并介绍了一种原理简单,操作方便的气动控制系统。在工艺试验过程中,充分证明了其结构原理及控制系统的合理性,进而在理论和实践两个方面确定了该机构已达到设计要求。 It introduces the function, structure theory and movement theory of a new pad conditioner, it provides a calculational formula of conditioning force through theoretic calculation. It introduces a pneumatic control system with simple theory and convenient manipulation. During technical experiment, it proves rationality of structure theory and control system sufficiently. Consequently, it confirms that the structure has achieved design require basically from theorv and nractice.
出处 《电子工业专用设备》 2012年第8期1-3,30,共4页 Equipment for Electronic Products Manufacturing
基金 国家02重大专项(项目编号:2009ZX02011-005A)
关键词 抛光垫修整机构 修整力 气动控制系统 Pad conditioner Conditioning force Pneumatic control system
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  • 1苏建修,郭东明,康仁科,金洙吉,李秀娟.ULSI制造中硅片化学机械抛光的运动机理[J].Journal of Semiconductors,2005,26(3):606-612. 被引量:14
  • 2Tat-Kwan Yu, Chris Yu and Marius Orlows. Combined asperity contact and fluid flow model for chemical-mechanical polishing[C]. NUPAD 29-32.
  • 3Tat-Kwan Yu,Chris Yu and Marius Ofiows. A ststistic polishing pad model for chemical-mechanical polishing [C].IEEE IEDM Washington DC,Dec,5-8(1993) 865-868.
  • 4Steven M. Zuniga, Soquel, Carrier head with a flexible membrane and an edge load ring, U.S. Pat No.6, 358, 121, Mar,19, 2003.
  • 5Stephen C.Schuitz, Carrier having pistons for distributing a pressing force on the back surface of a work piece, U.S. Pat No.6, 336, 853, Jan,8,2002.
  • 6Guanghui Fu, Abhijit Chandra, Sumit Guha, and Ghatu Subhash. A Plasticity-Based Model of Material Removal in Chemical-Mechanical Polishing (CMP)[C]. IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING 14(2001), 406-417.
  • 7F.W. Preston. The theory and design of plate glass polishing machine[J]. J Soc Glass Tech , 1927, 11(44): 214-256.
  • 8Cook, et al. Polishing pads and methods for their use, U.S.Pat No.5, 489,233, February, 6, 1996.
  • 9Yongwu Zhao,L. Chang. A micro-contact and wear model for chemical-mechanica [C]. polishing of silicon wafers,Wear (2002)252,220-226.
  • 10J.Luo, D.A.Domfeld. Material removal mechanism in chemical mechanical polishing: Theory and modeling[C]. IEEE Trans. Semi conduct .Manufact, 2001, 14(2): 112-133.

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