摘要
利用COMSOL Multiphysics 3.5a有限元软件中的RF模块对酸腐蚀前后多晶硅表面的光学特性进行数值模拟,通过求解麦克斯韦方程组和材料本构方程,获得硅片的表面电场z分量、表面磁场y分量和反射率的变化规律。结果表明:与初始硅片相比,绒面的表面电场z分量和表面磁场y分量的数值明显偏大,当波长为600nm时,绒面表面电场z分量的最大值和最小值分别为初始硅片的3.2倍和3.5倍,表面磁场y分量两个极值约为初始硅片的7.5倍;初始硅片反射率较高,绒面具有较好的陷光作用,其反射率明显偏小。通过对比实验和模拟结果可知,模拟值和试验值变化趋势基本一致,两者吻合较好,可为实际生产和试验研究提供理论指导。
Optical properties of acidic texturing of multicrystalline silicon wafer were simulated by solving the Maxwell and material equations, using RF MODULE of COMSOL Multiphysics version 3.5a. The varying laws of surface electric field z component, surface magnetic field y component and reflectivity of initial and acidic textured wafer were obtained. It is found that the numerical values of surface electric field z component and surface magnetic field y component of acidic textured wafer are larger than those of initial wafer. When wavelengh is 600nm, maximum value and minimum value of surface electric field z component of acidic textured wafer are 3.2 times, 3.5 times than those of initial wafer, respectively, and two extremum value of surface electric field z component is about 7.5 times than those of initial wafer. Reflectivity of initial wafer is relatively high, and reflectivity of acidic textured wafer is obvious- ly small because of the better light trapping. Change trend of numerical simulation results are accorded with that of experimental ones, which provided theory bases for the practice production of acidic texturing of multicrystalline sili- COIl wafer.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2012年第8期1366-1370,共5页
Acta Energiae Solaris Sinica
基金
2010江西省教育厅科技项目(GJJ10647)
2009年江西省高校省级教改项目(JXJG-09-24-2)
09年校级招标课题(xj0901)
关键词
多晶硅
酸腐蚀
反射率
绒面
数值模拟
muhicrystalline silicon
acidic etching
reflectivity
texturing
numerical simulation
