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Fe—Ni合金薄膜组成表面分析测量国际关键比对CCQM—K67 被引量：2

International Key Comparison CCQM-K6？. Surface Analysis Measurement of Composition for Fe-Ni Alloy Film
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摘要 利用X射线光电子能谱技术，建立了Fe—Ni合金薄膜组成表面分析准确定量方法，中国计量科学研究院参加了国际关键比对CCQM—K67。根据最近公布的关键比对结果，中国计量科学研究院测量的Fe原子分数结果为51．48％，与参加的各国国家计量研究院的结果（50．02％）达到了等效一致。 Based on X-ray photoelectron spectroscopy technique, the National Institute of Metrology of China developed an accurate analytical method and took part in the CCQM-K67 international key comparison on surface analysis measurement of the composition for Fe-Ni alloy film. According to the recently published comparison results, the measured Fe atom fraction （51.48%） by the National Institute of Metrology of China was agreed with the reference value （50.02%） of the CCQM-K67 key comparison.
作者 王海 宋小平 程斌 冯颖
机构地区 中国计量科学研究院 北京化工大学分析测试中心 北京联合大学生物化学工程学院
出处 《计量学报》 CSCD 北大核心 2012年第5期463-466,共4页 Acta Metrologica Sinica
基金 国家科技基础条件平台建设项目（2005DKA10800/2005DKA10806） 中央级公益性科研院所基本科研业务费专项（2007QK20/AKY0727）
关键词 计量学 Fe—Ni合金薄膜 表面分析 X射线光电子能谱 国际关键比对 Metrology Fe-Ni alloy film Surface analysis X-ray photoelectron spectroscopy International key comparison
分类号 TB99 [机械工程—测试计量技术及仪器]
  • 相关文献

参考文献11

  • 1Baer D R. Improving surface-analysis methods for characterization of advanced materials by development of standards, reference data, and interlaboratory comparisons [J]. Suoeace and Interface Analysis,2007,39 (4): 283 - 293.
  • 2Grant J T, Williams P, Fine J, et al. The status of reference data, reference materials and reference procedures in surface analysis [ J ]. Surface and Interface Analysis,1988,13(1) : 46 -50.
  • 3Seah M P, Spencer S J, Bensebaa F, et al. Critical review of the current status of thickness measurements for ultrathin SiO2 on Si Part V: Results of a CCQM pilot study [ J ]. Surface and Interface Analysis, 2004,36 ( 9 ): 1269 - 1303.
  • 4Seah M P. Intercomparison of silicon dioxide thickness measurements made by multiple techniques: the route to accuracy [ J ]. Journal of vacuum science & technology A : vacuum,surfaces ,andfilms ,2004 ,22(4) : 1564 - 1571.
  • 5Seah M P. CCQM-K32 key comparison and P84 pilot study : amount of silicon oxide as a thickness of SiO2 on Si [ J ]. Metrologia, 2008,45 ( 1A ) : Technical supplement 08013.
  • 6Seah M P, Unger W E S, Wang H, et al. Ultra-thin SiO2 on Si IX: absolute measurements of the amount of silicon oxide as a thickness of SiO2 on Si [ J ]. Surface and Interface Analysis ,2009,41 (5) : 430 -439.
  • 7Kim K J, Moon D W, Park C J, et al. Quantitative surface analysis of Fe-Ni alloy films by XPS, AES and SIMS [ J ]. Surface and Interface Analysis ,2007,39(8) : 665 -673.
  • 8Kim K J, Moon D W, Hayashi T, et al. CCQM-P98: Improvement of quantitative analysis of Fe-Ni alloy films using a certified alloy reference film [J]. Metrologia,2009, 46(1A) : Technical supplement 08006.
  • 9王海,程斌,宋小平,刘芬.Fe-Ni合金薄膜组成准确测量的XPS研究[J].稀有金属,2010,34(3):431-435. 被引量：4
  • 10Briggs D, Grant J T. Surface Analysis .by Auger and X- ray Photoelectron Spectroscopy [ M ]. Manchester: IM Publications and Surface Spectra Ltd,2003.

二级参考文献14

  • 1刘芬,邱丽美,赵良仲,王海,阚莹,宋小平.用XPS法精确测量硅片上超薄氧化硅的厚度[J].化学通报,2006,69(5):393-398. 被引量：4
  • 2Grant J T,Williams P,Fine J,Powell C J.The status of refer-ence data,reference materials and reference procedures in surfaceanalysis. Surface and Interface Analysis . 1988
  • 3Tanuma S,Powell C J,Penn D R.Calculations of electron ine-lastic mean free paths V:data for 14 organic compounds over the50~2000 eV range. Surface and Interface Analysis . 1994
  • 4Seah MP,Gilmore I S.Simplified equations for correction pa-rameters for elastic scattering effects in AES and XPS for Q,βand attenuation lengths. Surface and Interface Analysis . 2001
  • 5Seah MP,Spencer S J,Bensebaa F,Vickridge I,Danzebrink H,Krumrey M,Gross T,Oesterle W,Wendler E,Rheinlander B,Azuma Y,Kojima I,Suzuki N,Suzuki M,Tanuma S,Moon DW,Lee HJ,Cho H M,Chen H Y,Wee A T S,Osipowicz T,Pan J S,Jordaan WA,Hauert R,Klotz U,van der Mare.Critical reviewof the current status of thickness meas-urements for ultrathin SiO2on Si Part V:Results of a CCQMpilotstudy. Surface and Interface Analysis . 2004
  • 6Seah MP.Intercomparison of silicon dioxide thickness measure-ments made by multiple techniques:the route to accuracy. Journal of Vacuum Science&Technology A:Vacuum,Surfaces,and Films . 2004
  • 7Seah M P.CCQM-K32 key comparison and P84 pilot study:amount of silicon oxide as a thickness of SiO2on Si. Metrolo-gia . 2008
  • 8Seah MP,Unger W E S,Wang H,Jordaan W,Gross Th,DuraJ A,Moon D W,Totarang P,Krumrey M,Hauert R,Mo Z Q.Ultra-thin SiO2on Si IX:absolute measurements of the amount ofsilicon oxide as a thickness of SiO2on Si. Surface and Inter-face Analysis . 2009
  • 9Kim K J,Moon D W,Park C J,Simons D,Gillen G,Jin H,Kang HJ.Quantitative surface analysis of Fe-Ni alloy films byXPS,AES and SIMS. Surface and Interface Analysis . 2007
  • 10Kim K J,Moon D W,Hayashi T,Fujimoto T,Heo S,Jeong CS,Jordaan W,van Staden M,Prins S,Kang H J,Kim J H,Gross T,Procop M,Schmidt D,Wirth T,Unger W E S,WangH,Song X P.Improvement of quantitative analysis of Fe-Ni al-loy films using a certified alloy reference film. Metrologia . 2009

共引文献3

同被引文献30

  • 1王海,程斌,宋小平,刘芬.Fe-Ni合金薄膜组成准确测量的XPS研究[J].稀有金属,2010,34(3):431-435. 被引量：4
  • 2朱志强,丁铁柱,张利文,王强,赵倩.离子束溅射La_(0.5)Sr_(0.5)CoO_(3-δ)薄膜的XRD和XPS研究[J].真空科学与技术学报,2006,26(6):494-499. 被引量：8
  • 3van der Marel C, erheijen M A, Tamminga Y, et al. Thickness and composition of ultrathin Si02 layers on Si [ J]. Journal of vacuum science & technology A : vacuum, surfaces, andfilms, 2004, 22(4):1572- 1578.
  • 4Briggs D, Grant J T. Surface analysis by Auger and X-ray photoelectron spectroscopy [ M ] . Manchester: IM Publications and Surface Spectra Ltd ,2003.
  • 5Baer D R. Improving surface-analysis methods for characterization of advanced materials by development of standards, reference data, and inteflaboratory comparisons [ J ]. Surface and Interface Analysis, 2007, 39(4) : 283 -293.
  • 6Seah M P. Intercomparison of silicon dioxide thickness measurements made by multiple techniques: the route to accuracy [ J ]. Journal of vacuum science & technology A : vacuum, surfaces, and films, 2004, 22 ( 4 ) : 1564 - 1571.
  • 7Seah M P, Spencer S J, Bensebaa F, et al. Critical review of the current status of thickness measurements for uhrathin Si02 on Si Part V : results of a CCQM pilot study [ J ]. Surface and Interface Analysis, 2004, 36 ( 9 ) : 1269 - 1303.
  • 8Seah M P. CCQM-K32 key comparison and P84 pilot study : amount of silicon oxide as a thickness of SiO2 on Si [ R]. NPL Report AS 27,2008.
  • 9Seah M P, Unger W E S, Wang H, et al. Ultra-thin SiO2 on Si IX: absolute measurements of the amount of silicon oxide as a thickness of SiO2 on Si [ J ]. Surface and Interface Analysis ,2009, 41 (5) : 430 -439.
  • 10Seah M P, Spencer S J. Uhrathin SiO2 on Si I: quantifying and removing carbonaceous contamination [ J ]. Journal of vacuum science & technology A : vacuum, surfaces, andfilms,2003, 21 (2) : 345 - 352.

引证文献2

二级引证文献1

计量学报
2012年 第5期

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