全N型TFT ESD瞬态检测电路的设计

Design of ESD-transient detection circuit with whole N-type TFTs

为适应有源发光二极管显示(AMOLED)以及有源液晶显示(AMLCD)技术的发展,使用三级反向器反馈结构设计了一种全N型的TFT静电放电(ESD)瞬态检测电路,并采用对比仿真研究的方式分析该电路的性能优劣.结果显示:反馈器件一方面可以提高各功能器件的转换速度,以保证箝位器件能够及时打开与关闭,避免因长时间流过大电流而引起箝位器件失效;另一方面可以控制箝位器件栅极电压的保持时间,从而满足不同电路的需求;三级反向器可以稳定箝位器件的栅极电压波形,有利于电路功能的更好实现.该设计满足基本ESD检测电路的相关参数要求,并且提高了电路的总体性能.

To meet the needs of development of active matrix/organic light emitting diode（AMOLED） and active matrix liquid crystal displays（AMLCD） technology,an electrostatic discharge（ESD） transient detection circuit with N-type TFTs is presented,which has a three-inverter buffer with an N-type feedback device.The simulation result of the proposed circuit shows that the feedback device could improve the converting speed of each functional components,which insures the proposed circuit could be turned on/off in time,avoids clamping device failure caused by long time excessive current flow.Besides,it could control the gate voltage extent of the clamping device to meet the requirement of different circuits.Also,the three-inverter buffer could stabilize the gate voltage waveforms of the clamping device to improve the performance of this circuit.This design meets the basic parameters requirements of the ESD-transient detection circuit,and also improves its property.