期刊文献+

坩埚中自由空间量对Bridgman法生长的CdZnTe晶体缺陷的影响 被引量:1

Influence of Free-space Volume in Ampoule on Defects of CdZnTe Crystal Grown by Bridgman Method
下载PDF
导出
摘要 采用Bridgman法生长CdZnTe晶体.分别采用红外透过显微镜和正电子湮灭寿命谱仪研究了CdZnTe晶体中的Te夹杂相、Cd空位等缺陷与坩埚中的自由空间量大小的关系.结果表明:随着坩埚自由空间量的减小,晶体中Te夹杂相密度从6.67×104/cm2降低到2.36×103/cm2,且Te夹杂相尺寸减小;晶体的正电子平均寿命值随着坩埚自由空间量的减小从325.4 ps降低到323.4 ps,表明晶体的Cd空位浓度及微结构缺陷减少;晶体的红外透过率和电阻率则随着坩埚自由空间量的减小大幅提高,进一步表明坩埚中自由空间量的减小能够有效地降低晶体中的缺陷浓度. CdZnTe crystal was grown by Bridgman method.The relationship between the free-space volume in the ampoule and the defects in CZT,such as Te inclusion and Cd vacancy,was studied by IR transmission microscopy and positron annihilation technique(PAT).With the decrease of the free-space volume in the ampoule,the density reduced from 6.67×104/cm2 to 2.36×103/cm2 with the reduction of Te inclusions.The average positron lifetime decreased from 325.4 ps to 323.4 ps with the decrease of the free-space volume,indicating a reduction of Cd vacancies.The improvement of IR transmittance and resistivity of CZT further demonstrates that lowing the free-space volume in the ampoule can effectively depress the defects in CZT crystal.
出处 《无机材料学报》 SCIE EI CAS CSCD 北大核心 2012年第8期790-794,共5页 Journal of Inorganic Materials
基金 国家自然科学基金(10675080) 上海市重点学科基金(S30107)~~
关键词 CDZNTE 缺陷 正电子寿命 Te夹杂 CdZnTe defect PAT Te inclusions
  • 相关文献

参考文献15

  • 1Eisen Y, Shor A. CdTe and CdZnTe materials for room-temperature X-ray and gamma ray detectors. J. Cryst. Growth, 1998, 184-185: 1302-1312.
  • 2Verger L, Bonnefoy J P, Glasser F, et al. New developments in CdTe and CdZnTe detectors for X and gamma-ray applications. J. Electron. Mater., 1997, 26(6): 738-744.
  • 3Sang Wen-Bin, Qian Yong-Biao, Shi Wei-Min, et al. Equilibrium partial pressures and crystal growth of Cd1-xZnxTe. J. Cryst. Growth, 2000, 214-215: 30-34.
  • 4Tumer T O, Yin Shi, Cajipe Victoria, et al. High-resolution pixel detectors for second generation digital mammography. Nucl. Instrument. Methods A, 2003, 497(1): 21-29.
  • 5Czock K H, Arlt R. Use of CdZnTe detectors to analyze gamma emission of safeguards samples in the field. Nucl. Instrument., Methods A, 2001, 458(1/2): 175-182.
  • 6Camarda G S, Bolotnikov A E, Cui Y, et al. CdZnTe Room-temperature Semiconductor Gamma-ray Detector for National-security Applications, Applications and Technology Conference, IEEE Long Island , May 2007, 1-8.
  • 7Bavdaz M, Peacock A, Owens A, et al. Future space applications of compound semiconductor X-ray detectors. Nucl. Instrument. Methods A, 2001, 458(1/2): 123-131.
  • 8Abbas K, Morel J, Etcheverry M, et al. Use of miniature CdZnTe x/γ detector in nuclear safeguards: characterisation of spent nuclear fuel and uranium enrichment determination. Nucl. Instrument. Methods A, 1998, 405(1):153-158.
  • 9Bolotnikov A E, Abdul-Jabbar N M, Babalola O S, et al. Effects of Te Inclusions on the Performance of CdZnTe Radiation Detectors. Nuclear Science, Honolulu, 2007, 1788-1797.
  • 10Rudolph P. Non-stoichiometry related defects at the melt growth of semiconductor compound crystals-a review. Crystal Research and Technology, 2003, 38(7/8): 542-554.

同被引文献17

  • 1熊志华,孙振辉,雷敏生.基于密度泛函理论的第一性原理赝势法[J].江西科学,2005,23(1):1-4. 被引量:20
  • 2段鹤,陈效双,孙立忠,周孝好,陆卫.闪锌矿结构CdTe和ZnTe能带结构和有效质量的第一性原理计算[J].物理学报,2005,54(11):5293-5300. 被引量:12
  • 3FiederleM, Feltgen T, Meinhardt J,et al. State of the art of (Cd, Zn) Te as gamma detector [J]. J Cryst Growth, 1997,197(3):635.
  • 4Rozale H, Lazreg A, Chahed A,et al. Structural, electronic and optical properties of the wide-gap Znl CdxTe ternary alloys [J]. Superlattices Microstructures, 2009,46 (4) : 554.
  • 5Hay P J, Martin R L, Uddin J, et al. Theoretical study of CeO2 and Ce2 03 using a screened hybrid density functional [J]. Chem Phys,2006,125(3) :034712.
  • 6Matteo Coeoccioni, Stefano de Gironcoli. Linear response approach to the calculation of the effective interaction pa- rameters in the LDA+U method [J]. Phys Rev B,2005,71 (3) :035105.
  • 7Hao Wang, Kenji Konashi. LDA+U study of Pu and PuO2 on ground state with spin-orbital coupling [J]. J Alloys Compd, 2012,553 : 53.
  • 8Segall M D, Philip J D Lindan, Probert M J, et al. First- principles simulation.-Ideas, illustrations and the castep code [J]. J Phys: Condensed Matter, 2002,14 : 2717.
  • 9Madelung O. Landolt-Bornstein: Numerical data and func- tional relationships in science and technology-new series [M]. Berlin Springer-Verlag, 1982.
  • 10Gil B, Dunstan D J. Tellurium-based ]I-VI compound semi- conductors and heterostructures under strain[J]. Semicond Sei Technol, 1991,6 (6) : 4282438.

引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部