期刊文献+

基于CMOS工艺平台反熔丝FPGA实现 被引量:4

The Antifuse FPGA Based on CMOS Process
下载PDF
导出
摘要 由于反熔丝FPGA具有低功耗、高密度、可靠性高、抗辐射能力强以及设计上具有灵活性等优势,在军事和卫星领域得到广泛的应用。但由于工艺的限制,目前国内未见相关研究的报道。根据目前现状,利用现有的工艺,开发出一种可以与普通CMOS.Y--艺兼容的反熔丝单元。经过测试,其熔断后的电阻约为330Ω~400Ω,同时给出了基于此种反熔丝单元的阵列设计,体现了低功耗、高密度、易实现等优势。此设计不但满足了目前的工作需要,并为以后反熔丝电路的设计提供了有用的参考,为航天和军事领域的应用提供了有力的支持和保障。 The antifuse FPGA is widely used in the field of military affairs and satellite, because its low power, high density and dependability, better in radiation hardness, flexible in designs. But the process was limited in our country, we have not found the researches about this technique. So the tectonic of we hold is used to develop a new antifuse cell, which is compatible to CMOS process. The cell's resistance after fusion is 330Ω-400Ω, and design of array has been given. The advantages of low power, high density and flexible in designs are embodied. The design not only satisfied the needs of present work, but supplies a worthful reference for antifuse circuit design in future, it will provide good supports in the aerospace and military applications.
出处 《电子与封装》 2012年第8期23-25,29,共4页 Electronics & Packaging
关键词 反熔丝单元 FPGA 熔断电阻 反熔丝阵列设计 antifuse cell FPGA resistance after fusion design of anti fuse array
  • 相关文献

参考文献8

  • 1KenO'Neill.反熔丝FPGA技术是卫星应用的理想选择[J].电子产品世界,2005,12(10B):92-94. 被引量:12
  • 2McCollum J. ASIC versus antifuse FPGA reliability[J]. IEEE Aerospace conference, 2009:1-11.
  • 3Nejad R J, Rickey P A, Konadu K, et al. Radiation Characterization of a Hardened 0.22μm Anti-Fuse Field Programmable Gate Array[J]. IEEE Transactions on Nuclear Science, 2006, 53(6):3 525-3 531.
  • 4Rezgui S, Wang J J, et al. SET characterization and mitigation in RTAX-S antifuse FPGAs[J]. IEEE Aerospace conference, 2009:11-14.
  • 5Daichi Kaku, Toshimasa Namekawa, et al. A Field Programmable 40-nm Pure CMOS Embedded Memory Macro using a PMOS Antifuse[J]. Solid-State Circuits Conference, 2009:217 - 220.
  • 6Wlodek Kurjanowicz, Ottawa, Split-channel Antifuse Array Architecture:USA 7,402,855B2[P/OL]. 2008-06-22 [2005-05-06].
  • 7Yoshida, et al. Method of Manufacturing Semiconductor Integrate Circuits:USA 3,634,929[P/OL]. 1972-01-18 [1969-10-29].
  • 8Mohsen, et al. Programmable Low Impedance Antifuse Element:USA 4,823,181 [P/OL]. 1989-04-18 [ 1986-05-09].

共引文献11

同被引文献23

  • 1王洪昕,李平,杜涛,万义才.基于NC-Verilog的反熔丝FPGA全电路快速仿真[J].微电子学与计算机,2015,32(4):79-81. 被引量:1
  • 2孙承松,张丽娟,李新.ONO反熔丝的研究[J].沈阳工业大学学报,2006,28(5):546-548. 被引量:4
  • 3吉国凡,赵智昊,杨嵩.基于ATE的FPGA测试方法[J].电子测试,2007(12):43-46. 被引量:13
  • 4HUANG W K,MEYER F J,CHEN X,et al.Testing configurable LUT-based FPGA’s[J].IEEE Trans VLSI Syst,1998,6(2):276-283.
  • 5INOUE T,MIYAZAKI S,FUJIWARA H,et al.Universal fault diagnosis for lookup table FPGA[J].IEEE Design Test Computer,1998,15(1):39-44.
  • 6STROUD C,KONALA S,CHEN P,et al.Built-in self-test of logic blocks in FPGAs[C]∥Proceedings of VLSI Test Symposium.Princeton,NJ,USA,1996:387-392.
  • 7STROUD C,LEE E,KONALA S,et al.Using ILA testing for BIST in FPGAs[C]∥Proceedings of Test Conference.Washington,DC,USA,1996:68-75.
  • 8Actel Corporation.ACT 1 series FPGAs[EB/OL].(1996-05-02)[2015-02-09].http:∥www.actel.com/documents/ACT1_DS.pdf.
  • 9Actel Corporation.Testing and burn-in of actel FPGAs[EB/OL].(2003-04-21)[2015-02-09].http:∥www.actel.com.
  • 10杨海钢,孙嘉斌,王慰.FPGA器件设计技术发展综述[J].电子与信息学报,2010,32(3):714-727. 被引量:220

引证文献4

二级引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部