Si基OLED微显示器阳极图案化研究

Research on the anode patterning of the OLED-on-silicon microdisplay

在传统的Si基OLED微显示器像素阳极工艺流程基础上,提出利用互补金属氧化物半导体(CMOS)工艺制作像素阳极的一次图案化工艺,从而精简工艺流程,节省投资。分析了常规CMOS工艺中Al作为像素阳极表面材料对OLED微显示器光电性能的影响,开发了一种Si芯片作为微显示器基板,最小像素面积为12mm×4mm,在其表面制作有机发光材料,形成Si基OLED微显示器。实验结果表明,在5V驱动电压下,本文研制的OLED微显示器发光强度可达1 000cd/m2以上,电流密度0.1mA/mm2以上,光电响应速度280ns以下,表明利用常规CMOS工艺开发Si基微显示器的可行性。

When the traditional pixel patterning process for the OLED-on-Si microdisplay fabricates the pixel anodes in two independent process flows, the anode patterning process based on complementary metal oxide semiconductor （CMOS） process is presented to simplify the manufacture process flow and reduce the huge investment cost. The electro-optical performance of the organic light emitting microdis- play with A1 serving as the pixel anode material in the general CMOS process is analyzed. A Si chip for the microdisplay backplane with the minimum pixel size of 12 mm × 4 mm is developed. The organic lighting material is produced on the silicon chip surface to fabricate the OLED-on-Si microdisplay. The experiment results show that the light intensity is more than 1000 cd/m2 and the current density is more than 0.1 mA/mm2 when A1 is used as the pixel anode material and the 5 V voltage is applied to drive the OLED pixel. The electro-optical response is less than 280 ns. These results indicate that it is feasible to develop the OLED-on-Si microdisplay in the conventional CMOS process.