期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

五结太阳能电池设计与模拟

The Design and Simulation of 5-junction Solar Cells
下载PDF
导出
摘要 设计了与太阳光谱更匹配的五结太阳能电池(Al)GaInP/AlGa(In)As/(In)GaAs/GaInAsN/Ge,并首次应用APSYS软件对其电特性进行了模拟。与四结太阳能电池和传统的InGaP/GaAs/Ge结构进行对比,结果表明该结构各结电流更加匹配,获得了较高的转换效率。 For the first time, the （A1）GalnP/A1Ga（In）As/（In）GaAs/GaInAsN/Ge solar cell structure was designed and simulated with the software Apsys. Compared with the other solar cells structure, （Al）GaInP/AIGa（In）As/（In）GaAs/GaInAsN/Ge shows better current matching with the other subcells and achieves a higher conversion efficiency.
作者 程健 唐吉玉 周福成 张国芳 杨帆 刘巍
机构地区 华南师范大学物理与电信工程学院
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 2012年第4期325-329,共5页 Research & Progress of SSE
关键词 镓铟砷氮 太阳能电池 转换效率 光伏效应 GaInAsN solar cell conversion efficiency photovoltaic effect
分类号 TM914.4 [电气工程—电力电子与电力传动] TN304.2 [电子电信—物理电子学]
  • 相关文献

参考文献13

  • 1King R R, Fetzer C M, Colter P C, et al. High-effi- ciency space and terrertrial multijunction solar cells through bandgap control in cell structures[C]. Proc 29th IEEE PVSC,New Orleans, 2002 : 776-781.
  • 2Shockley W, Queisser H J. Detailed balance limit of efficiency of p-n junction solar cells[J]. Journal of Ap- plied Physics, 1966,32 (3): 510-519.
  • 3Marti A, Araujo G L. Limiting efficiencies for photo- voltaic energy conversion in multigap systems[J]. Solar Energy Materials and Solar Cells, 1996,43 (2) : 203- 222.
  • 4Kurtz S R, Myers D, Olson J M. Projected perfor- mance of three and four junction devices using GaAs and GalnP[C]. Proceedings of 26th IEEE PVSC,Ana- heim, 1997 : 875-878.
  • 5Ptak A J, Friedman D J, Kurtz S, et al. Low-accep- tor-eoncentration GaInNAs grown by molecular-beam epitaxy for high-current p-i-n solar cell applieations [J]. Journal of Applied Physics, 2005,98 (9) : 094501- 1-094501-5.
  • 6Kurtz S R, Klem J F, Allerman A A, et al. Minority carrier diffusion and defects in InGaAsN grown by molecular beam epitaxy[J]. Applied Physics Letters, 2002,80(8) : 1379-1381.
  • 7Kurtzsr, Allermanaa, JONES E D. InGaAsN solar cells with 1.0 eV band gap,lattice matched to GaAs [J]. Appl Phys Lett, 1999,74(5):729-732.
  • 8Leibiger G, Gottschalch V, Schubert M. Optical function, photon properties, and composition of In- GaAsN single layers derived from far-and near-in- frared spectroscopic ellipsometry [J]. Appl Phys, 2001,90: 5951-5958.
  • 9Chang Y A, Kuo H C, Chang Y H, et al. Simulation of 1300-nm Ino.4 Ga0.6 As0.986 N0.014/GaAs1-x Nx quan- tum-well lasers with various GaAs1-xNx strain com- pensated barriers [J]. Opt Commun, 2004, 241 (1-3) : 195-202.
  • 10Kurtz Steven R, Allerman A A, Jones E D, et al. In- GaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs[J]. Applied Physics Letters,1999, 74(5) : 729-732.
固体电子学研究与进展
2012年 第4期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部