锗硅BiCMOS中的低成本、高性能PNP器件设计与制备

A Low Cost & High Performance PNP Transistor Design & Fabrication in SiGe BiCMOS

设计了一种新颖的伪垂直结构PNP晶体管。在锗硅BiCMOS工艺基础上,仅增加基区和集电区两道离子注入,以低成本工艺实现了优良的性能。晶体管电流增益在30以上,击穿电压大于7V,特征频率10GHz,满足高速电路设计的要求。

This paper reports a pseudo vertical PNP bipolar transistor. It shows very good performance with simple and cost-effective process. Two implantations for base and collector of PNP transistor are added in SiGe BiCMOS process. The current gain is above 30, BVceo is higher than 7 V and cut-off frequency is 10 GHz. This PNP transistor with its performance in BiCMOS and has reached the requirement for high speed circuit design.