摘要
报道了一款采用0.15μm GaAs功率MMIC工艺研制的Ka波段功率放大器芯片。芯片采用四级放大拓扑结构,在29～32GHz频带范围内6V工作条件下线性增益25dB,线性增益平坦度小于±0.75dB;饱和输出功率大于5W,饱和效率大于20%,功率增益大于22dB;1dB压缩点输出功率大于36.5dBm,效率大于18%。
The design and performance of power amplifiers developed using a 0. 15 μm GaAs process for Ka-band applications is presented. A four-stage amplifier demonstrates 25 dB small signal gain and ±0. 75 dB gain flatness from 29 GHz to 32 GHz. The power MMIC delivers a saturated output power of more than 5 W and a PAE of more than 20% with over 22 dB power gain across 29 GHz to 32 GHz at a drain bias of 6 V. The power MMIC provides an output power of 36.5 dBm with a PAE of 18 % at 1 dB compression point.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2012年第4期351-355,共5页
Research & Progress of SSE
