摘要
提出了一种满足ISO/IEC18000-6C标准的无源超高频RFID(射频识别)标签芯片的射频前端结构,该结构包括高效率电荷泵、解调器、调制器、阻抗匹配网络和ESD保护电路。电荷泵通过阈值补偿原理及精确控制补偿电压有效抑制反向漏电流,消除了传统电荷泵中的阈值损失。芯片经TSMC0.18μm CMOS mixed signal工艺流片,实测结果表明,标签最远读距离达7m,写距离为3m,可应用于识别与定位,同时满足HBM2 000V的抗静电指标。
An ISO/IEC 18000-6C compliant RF front end for passive UHF RFID tag is presented, this RF front end includs a charge pump with high power conversion efficiency (PCE), demodulator, modulator, impedance matching network and ESD protecting circuit. The reverse leakage current is suppressed and the threshold voltage drop is eliminated by introducing the threshold compensation and accurate compensation voltage. The chip has been fabricated with TSMC 0. 18 vm CMOS mixed signal process, experimental measurement shows that the read range achieves 7 m while the write range is 3 m, which can be used for identification and localization, the target of HBM 2 000 V ESD protecting is also completed.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2012年第4期380-385,共6页
Research & Progress of SSE
基金
西藏民族学院校内资助项目(12myY08)
中央高校基本科研业务费资助项目(CHD2011JC084
CHD2011ZD004
CHD2012TD011)
国家自然科学基金资助项目(61162025
51164031)