期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

High efficiency bulk heterojunction organic solar cell by using high conductivity modified PEDOT:PSS as a buffer layer 被引量：4

High efficiency bulk heterojunction organic solar cell by using high conductivity modified PEDOT:PSS as a buffer layer
原文传递
导出
摘要 In this paper,bulk heterojunction solar cells with poly-(3-hexylthiophene)(P3HT):[6,6]-phenyl-C61-butyric-acid-methylester(PCBM) as an active layer and modified poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS) as a buffer layer are fabricated.The buffer layer is modified by adding 1% to 5% dimethyl sulfoxide(DMSO) into PEDOT:PSS solution before spin-coating.The conductivity of modified PEDOT:PSS and the performance of solar cells with modified PEDOT:PSS are measured.The highest conductivity of modified PEDOT:PSS with 4% DMSO can achieve 89.693 S/cm.The performance of organic solar cell with PEDOT:PSS modified by 4% DMSO is the best.The 4% DMSOmodified-PEDOT:PSS cell has a power conversion efficiency of 3.34%,V oc of 5.7 V,J sc of 14.56 mA/cm 2 and filling factor(FF) of 40.34%.
作者 邓振波 陈征 武慧 吕昭月 杜海亮 邹业 张国良 周茂杨
机构地区 Key Laboratory of Luminescence and Optical Information Department of Physics
出处 《Optoelectronics Letters》 EI 2012年第5期336-339,共4页 光电子快报（英文版）
基金 supported by the National Natural Science Foundation of China (Nos.60977027 and 60825407) the Fundamental Research Funds for the Central Universities (No.2010JBZ003) the Beijing Municipal Science & Technology Commission (No.Z090803044009001)
关键词 Buffer layers Butyric acid Conversion efficiency Dimethyl sulfoxide Fatty acids HETEROJUNCTIONS Organic solvents Solar cells 有机太阳能电池 PEDOT PSS 缓冲层 异质结 改性 高导电性 本体
分类号 TM914.4 [电气工程—电力电子与电力传动] TP333 [自动化与计算机技术—计算机系统结构]
  • 相关文献

参考文献15

  • 1A. Shah, P. Torres, R. Tscharner, N. Wyrsch and H. Keppner, Science 285, 692 (1999).
  • 2G. Dennler and N. S. Sariciftch, Proc. oflEEE 93, 1429 (2005).
  • 3S. E. Shaheen, D. S. Ginley and G. E. Jabbour, MRS Bull. 30, 10 (2005).
  • 4CHEN Zi-guo, LIU Peng-yi, WU Bing and ZHANG Yongzhe, Journal of Optoelectronics · Laser 22, 1162 (2011 ). (in Chinese).
  • 5L1 Fang-xin, WU Jia-qi, MENG Qing-lei, X1 Xi, GU Xiaofeng, QIAN Wei-ying, QUE Li-zhi, JI Jing-jia and LI Guohua, Journal of Optoelectronics · Laser 22,363 (2011). (in Chinese).
  • 6K. Tada, K. Hosoda, M. Hirohata, R. Hidayat, T. Kawai, M. Onoda, M. Teraguchi, T. Masuda, A. A. Zakhidov and K. Yoshin, Synthetic Metals 85, 1305 (1997).
  • 7A. M. Nardes, M. Kemerink, M. M. de Kok, E. Vinken, K. Maturova and R. A. J. Janssen, Organic Electronics 9, 728 (2008).
  • 8Jongwoon Park, Ari Lee, Younchan Yimc and Eunmi Han, Synthetic Metals 161,523 (2011 ).
  • 9Qingfeng Dong, Yinhua Zhou, Jianing Pei, Zhaoyang Liu, Yaowen Li, Shiyu Yao, Jibo Zhang and Wenjing Tian, Organic Electronics 11, 1327 (2010).
  • 10Zhong-qiang Wang, Xiao-ming Wu, Na Jing, Qing-chuan Hou, Zi-yang Hu, Xiao-man Cheng, Yu-lin Hua, Jun Wei and Shou-gen Yin, Optoelectronics Letters 5, 0173 (2009).

同被引文献58

  • 1Jenny Nelson. The physics of solar cells[M]. London: Im- perial College Press, 2003,1-18.
  • 2Paul G,Wolfram K,Martin C,et al. Approach to the physi-cal origin of breakdown in silicon solar cells by optica spectroscopy[J]. J. Appl. Phys. ,2010,108(].2) :123"703.
  • 3Peter Wurfel. The physics of solar cells[M]. Weinheim, Wiley VCH, 2005,1-].0.
  • 4Andreas Mandelis, Yu Zhang, Alexander Melnikov. Statis- tical theory and applications of lock-in carrierographic im- age pixel brightness dependence on multi-crystalline Si solar cell efficiency and photovoltage[J]. J. Appl. Phys., 2012,(112) :054505.
  • 5Mandelis Andreas, Batista Jerias, Shaughnessy Derrick. Infrared photocarrier radiometry of semiconductors: Physical principles, quantitative depth profilometry, and scanning imaging of deep subsurface electronic defects [J]. Physical Review B, 2003,67 (20) : 205208.
  • 6LI Bin-cheng, Shaughnessy Derrick, Mandelis Andreas,et al. Three-layer photocarrier radiometry model of ion-im- planted silicon wafers[J]. J. Appl. Phys. , 2004,95 (12) : 7832-7834.
  • 7LIU Xian-ming, LI Bin-cheng, ZHANG Xi-ren. Photocarrier radiometric and ellipsometric characterization of ion-im- planted silicon wafer[J]. J. Appl. Phys. ,2008 ,].03(12) : 123706.
  • 8LI Bin-cheng, Shaughnessy Derrick, Mandelis Andreas, et al. Accuracy of photocarrier radiometric measurement of electronic transport properties of ion-implanted silicon wafers[J]. J. Appl. Phys. ,2004,96(1) : 186.
  • 9Batista Jerias, Mandelis Andreas, Shaughnessy Derrick, et al. Deep subsurface electronic defect image contrast and resolution amplification in Si wafers using infrared photocarrier radiometry[J]. Appl. Phys. Lett., 2004, 85 (10):1713.
  • 10Mandelis Andreas, Batista Jerias, Gibkes Jurgen, et al. Noncontacting laser photocarrier radiometric depth pro- filometry of harmonically modulated band bending in the space-charge layer at doped SiO2 Si interface[J]. J. Ap- pl. Phys. ,2005,97(8) :083507.

引证文献4

二级引证文献8

Optoelectronics Letters
2012年 第5期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部