摘要
为了提高980nm半导体激光器的可靠性,采用氦离子注入形成腔面电流非注入区技术制作了4μm条宽的脊形波导激光器,并利用同一块外延片制作了常规工艺的4μm脊形波导激光器作为对比。经过长期老化实验得知:常规工艺器件在1500h前全部失效,而采取新技术的器件寿命超过了3000h。通过对器件的扫描电镜分析发现,腔面灾变性损伤、铟焊料的质量和腔面污染等因素对器件失效有直接影响。
To improve the reliability of 980 nm laser diodes,we produce 4 μm ridge waveguide laser diodes with current non-injection regions near both facets by He ion implantation technology,and a conventional device is made from the same wafer for comparison.After long-term aging,all conventional devices are disabled within 1500 h,and all the devices made by He implantation work well after 3000 h.Failure analysis for devices by scanning electron microscopy（SEM）,results shows that catastrophic optical damage on the facet,the quality of indium solder bonding and the stain of facets have direct impact on the devices′ reliability.
出处
《激光与光电子学进展》
CSCD
北大核心
2012年第9期123-127,共5页
Laser & Optoelectronics Progress
基金
中国政法大学青年教师学术创新团队资助项目
证据科学教育部重点实验室(中国政法大学)开放基金(2011KFKT04)资助课题
关键词
半导体激光器
氦离子注入
长期老化
失效分析
扫描电镜
laser diodes
He ion implantation
long-term aging
failure analysis
scanning electron microscopy
