空间单粒子锁定效应研究

Investigation of single event latchup

空间辐射效应是影响器件空间性能的重要因素,特别是单粒子锁定现象一直是困扰CMOS器件在空间应用的一个难题。为此,文中分析了空间单粒子锁定效应机理、特点、模拟试验及检测方法,并选取典型空间用器件开展了单粒子锁定试验研究,在此基础上,结合试验数据分析给出了单粒子锁定防护方法、监测方法及建议,供相关技术人员参考。

Radiation effects on avionics microelectronics are important reliability issues for many space applications. In particular, single-event latchup （SEL） phenomenon is a major threat to CMOS integrated circuits in space systems. To effectively circumvent the failure, it is important to know the behavior of such devices during latchup. In this paper, the mechanisms for SEL in CMOS devices are investigated. Several microelectronic devices used in avionics are tested using heavy ion beams, pulsed laser and 252Cf source. Based on the SEL test results, SEL-hardening and monitoring methods for preventing SEL from the systems design level are proposed.