摘要
Phase-change line memory cells with different line widths are fabricated using focused-ion-beam deposited C-Pt as a hard mask. The electrical performance of these memory devices was characterized. The current^oltage （I-V） and resistance-voltage （RV） characteristics demonstrate that the power consumption decreases with the width of the phase-change line. A three-dimensional simulation is carried out to further study the scaling properties of the phase- change line memory. The results show that the resistive amorphous （RESET） power consumption is proportional to the cross-sectional area of the phase-change line, but increases as the line length decreases.
Phase-change line memory cells with different line widths are fabricated using focused-ion-beam deposited C-Pt as a hard mask. The electrical performance of these memory devices was characterized. The current^oltage （I-V） and resistance-voltage （RV） characteristics demonstrate that the power consumption decreases with the width of the phase-change line. A three-dimensional simulation is carried out to further study the scaling properties of the phase- change line memory. The results show that the resistive amorphous （RESET） power consumption is proportional to the cross-sectional area of the phase-change line, but increases as the line length decreases.
基金
Project supported by the National Integrate Circuit Research Program of China (Grant No. 2009ZX02023-003)
the National Key Basic Research Program of China (Grant Nos. 2010CB934300, 2011CBA00602, and 2011CB932800)
the National Natural Science Foundation of China (Grant Nos. 60906003, 60906004, 61006087, and 61076121)
the Science and Technology Council of Shanghai of China (Grant No. 1052nm07000)
