摘要
Using three-dimensional technology computer-aided design （TCAD） simulation, parasitic bipolar amplification in a single event transient （SET） current of a single transistor and its temperature dependence are studied. We quantify the contributions of different current components in a SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both ]30-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of the SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of a single transistor.
Using three-dimensional technology computer-aided design （TCAD） simulation, parasitic bipolar amplification in a single event transient （SET） current of a single transistor and its temperature dependence are studied. We quantify the contributions of different current components in a SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both ]30-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of the SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of a single transistor.
基金
Project supported by the National Natural Science Foundation of China (Grant Nos. 60836004, 61076025, and 61006070)
the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20104307120006)
