期刊文献+

一种用于生物检测的半导体电场效应传感器

Research on Surface Field-effect Sensor for Biological Detection
下载PDF
导出
摘要 设计了一种简化的铝栅MOS半导体器件制作工艺流程,用6张掩模版成功制作出了基于表面电场效应原理的生物检测硅芯片传感器,采用SiO2-Si3N4复合栅介质层及耗尽型器件结构,以增强器件的识别与检测灵敏度。该传感器与常规铝栅MOS晶体管相比,去除了介质层表面的栅极导电层,代之以自组装技术制作生物薄膜并辅以栅参考电极作为控制栅极。用所制作的硅芯片传感器检测了相关生物蛋白质的电流响应,给出了该电流响应与器件沟道长度和沟道电阻及生物蛋白浓度等参数的关系,得到了较为满意的检测数据,达到了预期的基于表面电场效应的硅传感器制作和生物检测的目的。 Based on surface field-effect, Si chip sensors for biological detection were made with simplified A1 grid MOS process by employing only 6 pattern masks. For the sensors, complex SiO1-Si3N4 gate dielectric film and depletion mode structure were used to enhance the recognition and detection sensitivity. Compared to conventional MOSFET, the sensors replace the grid conductive layer with self-assembled biological films and also use grid reference electrode as the control grid. The current response of relative biological proteins was tested with the fabricated Si chip sensors. The relationship of current response with the channel length, channel resistance and concentration of those biological-like materials was given. The test results show that the expected gold of biological detection is reached.
出处 《半导体光电》 CAS CSCD 北大核心 2012年第4期474-477,506,共5页 Semiconductor Optoelectronics
基金 国家自然科学基金项目(30860073 50727803) 江西省科技厅项目(2008GZH0018)
关键词 电场效应传感器 检测 制造 工艺 设计 生物 field-effect sensor detection fabrication technology design biological
  • 相关文献

参考文献24

  • 1Bergveld P. Development of an ion-sensitive solid-state device for neurophysiological measurements[J]. IEEE Trans. Biomedical Engineering, 1970, BME-17 : 70-71.
  • 2Bergveld P. What happened in the past 30 years and what may happen in the next 30 years[J]. Sensors and Actuators B,2003, 88 : 1-20.
  • 3Manuela A, Dario A, Corrado D C, et al. Characterization of silicon transducers with Si3N, sensing surfaces by an AFM and a PAB system[J]. Sensors and Actuators B, 1995, 24-25 : 889-893.
  • 4Poghossian A S. The super-nernstian pH sensitivity of Ta2Os-gate ISFETs[J]. Sensors and Actuators B, 1992,7:367-370.
  • 5Katsube T, Lauks I, Zemel J N. pH-sensitive sputtered iridium oxide films [J]. Sensors and Actuators B, 1982,2 : 399-410.
  • 6Collins S D. Practieal limits for solid-state reference eleetrodes[J]. Sensors and Actuators B, 1993,10 : 169- 178.
  • 7Yuri G V,AndreyV B. Analytical applications of pH- ISFETs[J]. Sensors and Actuators B, 1992,10 : 1-6.
  • 8Diekmann C, Dumschat C, Cammann K, et al. Disposable reference electrode [ J ]. Sensors and Actuators B, 1995,24-25:276-278.
  • 9Cane C,Gotz A, Merlos A, et al. Multilayer ISFET membranes for microsystems applications[J]. Sensors and Aetuators B, 1996,35-36 : 136-140.
  • 10Neuzil P. ISFET integrated sensor technology [ J]. Sensors and Actuators B, 1995,24-25:232235.

二级参考文献5

共引文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部