摘要
利用磁控反应溅射镀膜方法在低温(250℃)条件下制备了主要成分为B相亚稳态二氧化钒(VO2)的薄膜材料。电学性能测试表明:室温下该薄膜的方块电阻为50kΩ左右,电阻温度系数为-2.4%/K,可以作为非致冷红外微测热辐射热计的热敏材料。
VO2 （B） thin films were fabricated by magnetron sputtering under lowtemperature of 250 ℃. XRD test shows the thin films contain VOz （B） mostly and some V2O5.The sheet resistance of the films was detected to be about 50 kΩ under room temperature and the temperature coefficient of resistance （TCR） is near --0. 024/, showing the films can be used as thermal sensitive material for uncooled IR microbolometers.
出处
《半导体光电》
CAS
CSCD
北大核心
2012年第4期500-502,共3页
Semiconductor Optoelectronics
基金
创新研究群体科学基金项目(61021061)
