摘要
非对称多势垒可获得比双势垒更大的共振隧穿电流及更良好的峰谷比。通过分析单电子对任意势垒透射的理论模型,建立了任意非对称三势垒模型,研究了不同偏压和温度对透射系数的影响,并得出结论,为进一步设计非对称量子器件提供理论指导。
Asymmetric multi-barrier can obtain larger resonant tunneling current and better peak-valley ratio than double barrier. By analyzing the theoretical models of single-electron transmission on any harrier, an arbitrary asymmetric three-barrier model was established. Effects of different bias and temperatures on the transmission coefficient were studied. It provides a theoretical guidance for the further design of asymmetric quantum devices.
出处
《半导体光电》
CAS
CSCD
北大核心
2012年第4期540-543,599,共5页
Semiconductor Optoelectronics
基金
中北大学电子测试技术国家重点实验室青年基金资助项目
中北大学校青年基金资助项目
关键词
偏压
温度
非对称三势垒
透射系数
量子阱
bias
temperature
non-symmetric three-barrier
transmission coefficient
quantum wells