期刊文献+

高稳晶振在空间辐照条件下的频率特性变化

The Frequency Characteristic of High Stability Crystal Under Space Radiation Environment
下载PDF
导出
摘要 在空间恶劣环境下要求星载高稳晶振正常有效地工作,需要对其在空间辐照环境下的频率特性变化进行研究,利用地面辐照设备模拟空间辐照环境,通过不断增加辐照剂量,研究晶振相位噪声、短期频率稳定度、谐杂波以及输出功率等特性。 In order to insure the high stability crystal on satellite to work normally, the change of frequency character needs to be researched under space radiation environment, using ground radiation de- vice to simulate space radiation environment, and phase noise, short term frequency stability, harmonics, spurious and output power also need to be researched.
出处 《宇航计测技术》 CSCD 2012年第3期13-16,共4页 Journal of Astronautic Metrology and Measurement
关键词 空间辐照环境 相位噪声 频率稳定度 Space radiation environment Phase noise Frequency stability
  • 相关文献

参考文献3

二级参考文献10

  • 1张华林,陆妩,任迪远,郭旗,余学锋,何承发,艾尔肯,崔帅.双极晶体管的低剂量率电离辐射效应[J].Journal of Semiconductors,2004,25(12):1675-1679. 被引量:20
  • 2[2]Stassinopoulo E G,Raymond J P.The space radiation environment for electronic.Proc.of the IEEE.1998
  • 3[5]Tateo.Space environment and effects from ETS-Ⅵ Satelite EASA symposium on environment moldelling for space-based applications.ESTEC,Noordwijik,NL,1996
  • 4Carriere T,Ecoffet R,Poirot P. Evaluation of accelerated total dose testing of linear bipolar circuits. IEEE Trans Nucl Sci,2000,47(6) :2350.
  • 5Pease R L, Cohn L M, Fleetwood D M, et al. A proposed hardenss assurance test methodology for bipolar linear circuits and devices in a space ionizing radiation environment. IEEE Trans Nucl Sci,1997,44(6):1960.
  • 6Clure S Mc,Pease R L,Will W,et al. Dependence of total dose response of bipolar linear microcircuits on applied dose rate.IEEE Trans Nucl Sci, 1994,41 (6): 2544.
  • 7Carriere T,Beaucour J,Gach A,et al. Dose rate and annealing effects on total dose response of MOS and bipolar circuits.IEEE Trans Nucl Sci,1995,42(6):1567.
  • 8Johnston A H,Rax B G, Lee C I. Enhanced damage in linear bipolar integrated circuits at low dose rate. IEEE Trans Nucl Sci, 1995,42(6): 1650.
  • 9Flament O, Autran J L, Roche P, et al. Enhanced total dose damage in junction field effect transistors and related linear integrated circuits. IEEE Trans Nucl Sci, 1996,43 (6): 3060.
  • 10陈盘训.双极线性集成电路低剂量率辐射的增强损伤[J].核电子学与探测技术,1999,19(5):333-337. 被引量:10

共引文献51

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部