GaAs量子阱中退极化效应对光学整流的影响

Influence of depolarization effect on optical rectification in GaAs quantum well

用弛豫时间近似和紧致密度矩阵方法，在施加偏向电场的GaAs方量子阱中，研究了退极化场对光学整流的影响。结果表明，退极化场使共振峰的位置向高能方向发生移动。对应三个不同的偏向电场F=3×104V／cm，4×104V／cm，8×104V／cm的共振峰的位置分别为^u=108．48meV，108．92meV，111．99meV。共振峰位置的偏移量分别为5．96meV、5．99meV、6．28meV，其偏移量随偏向电场的增大而略有增大。

The influence of the depolarization effect on the optical rectification in electric-field-biased GaAs quantum well is studied using relaxation time approximation and a compact density-matrix approach. The results obtained show that the depolarization effect shifts the position of the resonance peak. For three different bias fields, F=3×104V/cm,4×104V/cm,8×104V/cm, the peak position is hw= 108.48 meV, 108.92 meV, 111.99 meV, respectively. The shift of the peak position is 5.96 meV, 5.99 meV and 6.28 meV, respectively, which increases with the bias field.