摘要
综述世界GaAs材料器件的产销情况、市场前景及GaAs材料的发展趋势。预测2 0 0 0年GaAsIC用于通讯将占GaAsIC市场的 71 % ,并以年均增长率 1 5%的速度发展。发光器件 1 999年增长 1 2 % ,其中激光器件增幅最大 ,达 1 6%。GaAs材料电子器件和光电器件的比例约为 2∶3。对大直径 (Φ76mm以上 )、低位错、低热应力、高质量的GaAs单晶有较大的需求量。VB、VGF和VCZ是满足这些要求的最佳GaAs单晶生长方法。
The development trend and market prospects of GaAs devices and GaAs materials were reviewed. It was predicted that 71% of the GaAs integrated circuits will be used in telecommunication with an annual increasing rate of 15% in 2000. In 1999, there was 12% annual increase of LED devices, most of which are laser diode devices (up to 16%). The ratio between electronics devices and optoeletronic devices is estimated to be approximately 2∶3. The rapid development of telecommunication needs large amount of high quality, large diameter (Φ>76 mm) GaAs single crystal and wafers because of its low density of dislocation and its low thermal stress. VB, VGF and VCZ are the feasible techniques to grow such GaAs crystals.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2000年第3期208-217,共10页
Chinese Journal of Rare Metals
关键词
砷化镓材料
器件
市场
GaAs materials, Devices, Market