方形格子光子晶体能态密度特性

Characteristics of Photonic Crystal State Density for Square Grid

应用平面波展开法研究砷化镓方形格子光子晶体能态密度的分布情况,得到填充率f随晶格半径a之间的变化对应的能态密度分布,得到砷化镓填充率f=0.20a时归一化频率存在最大光子带隙。研究结果为光子晶体器件的研究提供理论依据。

The distribution status of GaAs square grid photonic crystal state density were studied by the plane wave expansion method,and the state density of distribution were obtained of filling rate f changing with the crystal lattice a,and the maximum absolute photonic band gap was gained when f=0.20a of GaAs.This results provides theoretic basis for the research of photonic crystal devices.