摘要
针对低方阻、高透光度透明导电膜的要求,利用薄膜光学干涉原理,设计了ITO+SiO2复合型的透明导电膜;研究了基底温度、沉积速率、充氧量等工艺参数对ITO膜的影响;利用优化的工艺参数成功制备了复合透明导电膜。测试结果表明,膜层性能优异,能够满足使用要求。
To meet the demand of low sheet resistance and high transmittance,the stack of ITO+SiO2 was designed by the interference theory of thin film optics.The influence of substrate temperature,deposition rate and O2 flow on ITO film was studied.Composite transparent conductive thin film was successfully fabricated by optimizing the process parameters.Test results show that the composite film owns high performance and can fill the requirements.
出处
《真空》
CAS
2012年第5期32-34,共3页
Vacuum
关键词
透明导电膜
透光度
方阻
复合
TCO
transmittance
sheet resistance
composite
