非晶硅薄膜晶化过程的研究

Investigation of the crystallization process of amorphous silicon thin films

多晶硅薄膜具有较高的电迁移率和稳定的光电性能,是制备微电子器件、薄膜晶体管、大面积平板液晶显示的优质材料。多晶硅薄膜被公认为是制备高效、低耗、最理想的薄膜太阳能电池的材料。因此,如何制备多晶硅薄膜是一个非常有意义的研究课题。固相法是制备多晶硅薄膜的一种常用方法,它是在高温退火的条件下,使非晶硅薄膜通过固相相变而成为多晶硅薄膜。本文采用固相法,利用X-ray衍射及拉曼光谱,对用不同方法制备的非晶硅薄膜的晶化过程进行了系统地研究。

Polycrystalline silicon thin film is a high quality material for micro-electronic components, thin film transistors and large flat-panel LCD displays because of its high electrical mobility and stable photoelectric properties. Moreover, it has been regarded as a candidate material for making high efficiency, lower energy consumption and optimized thin film solar cells. Therefore, how to fabricate polycrystalline silicon thin film is a very meaningful research topic. Solid phase crystallization is a usual method to fabricate polycrystalline silicon thin film, by high temperature annealing to transfer amorphous film to polycrystalline phase. In this paper, the solid phase crystallization process of amorphous silicon thin films fabricated by different techniques are studied systematically by XRD and Raman spectroscopy.