基于IGBT的固态断路器开断策略研究

Study on breaking strategy of solid-state circuit breaker based on IGBT

根据IGBT关断不同电流时工作区的变化,通过栅极电阻控制其开断特性。在开断短路电流时,采用较大的栅极电阻,从而抑制开断过电压,其他情况下采用较小的栅极电阻,以保证开断速度。在Saber环境下,通过单相10kV固态断路器开断过载电流和短路电流两种工况,验证了所提开断策略的可行性及其抑制开断过电压的效果。本研究为开发适用于FREEDM等高压微网的固态断路器提供了新思路。

IGBT runs on various operating areas when it turns offdifferent size value of current. The breaking characteristics oflGBT can be controlled by changing the gate resistor. The higher value gate resistance is used to restrain the overvoltage generated during the breaking procedure when it turns off short circuit current, while the smaller value resistance is adopted to insure the high switching speed when it turns off the overload current. The feasibility and effectiveness of the over-voltage suppression of the breaking strategy is verified by simulation both under overload and short circuit current for 10 kV solid state circuit breaker in Saber software. The achievement of this work provides a new idea of developing solid state circuit breaker used in FREEDM and other high voltage micro grid.