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Atomic layer deposition of an Al_2O_3 dielectric on ultrathin graphite by using electron beam irradiation

Atomic layer deposition of an Al_2O_3 dielectric on ultrathin graphite by using electron beam irradiation
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摘要 Atomic layer deposition ofan Al2O3 dielectric on ultrathin graphite is studied in order to investigate the integration of a high k dielectric with graphite-based substrates. Electron beam irradiation on the graphite surface is followed by a standard atomic layer deposition ofAl2O3. Improvement of the Al2O3 layer deposition morphology was observed when using this radiation exposure on graphite. This result may be attributed to the amorphous change of the graphite layers during electron beam irradiation. Atomic layer deposition ofan Al2O3 dielectric on ultrathin graphite is studied in order to investigate the integration of a high k dielectric with graphite-based substrates. Electron beam irradiation on the graphite surface is followed by a standard atomic layer deposition ofAl2O3. Improvement of the Al2O3 layer deposition morphology was observed when using this radiation exposure on graphite. This result may be attributed to the amorphous change of the graphite layers during electron beam irradiation.
作者 蒋然 孟令国 张锡健 Hyung-Suk Jung Cheol Seong Hwang
机构地区 School of Physics Department of Materials Science and Engineering
出处 《Journal of Semiconductors》 EI CAS CSCD 2012年第9期34-37,共4页 半导体学报（英文版）
基金 supposed by the Independent Innovation Foundation of Shandong University,China(No.2010TS023) the China Postdoctoral Special Foundation(No.200902556) the China Postdoctoral Science Foundation(No.20080431176) the Postdoctoral Innovation Foundation of Shandong Province,China(No.200702027)
关键词 AL2O3 high k atomic layer deposition GRAPHENE Al2O3 high k atomic layer deposition graphene
分类号 TN304 [电子电信—物理电子学]
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参考文献19

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Journal of Semiconductors
2012年 第9期

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