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A strained Si-channel NMOSFET with low field mobility enhancement of about 140% using a SiGe virtual substrate 被引量:2

A strained Si-channel NMOSFET with low field mobility enhancement of about 140% using a SiGe virtual substrate
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摘要 A fully standard CMOS integrated strained Si-channel NMOSFET has been demonstrated. By adjusting the thickness of graded SiGe, modifying the channel doping concentration, changing the Ge fraction of the relaxed SiGe layer and forming a p-well by multiple implantation technology, a surface strained Si-channel NMOSFET was fabricated, of which the low field mobility was enhanced by 140%, compared with the bulk-Si control device. Strained NMOSFET and PMOSFET were used to fabricate a strained CMOS inverter based on a SiGe virtual substrate. Test results indicated that the strained CMOS converter had a drain leakage current much lower than the Si devices, and the device exhibited wonderful on/off-state voltage transmission characteristics. A fully standard CMOS integrated strained Si-channel NMOSFET has been demonstrated. By adjusting the thickness of graded SiGe, modifying the channel doping concentration, changing the Ge fraction of the relaxed SiGe layer and forming a p-well by multiple implantation technology, a surface strained Si-channel NMOSFET was fabricated, of which the low field mobility was enhanced by 140%, compared with the bulk-Si control device. Strained NMOSFET and PMOSFET were used to fabricate a strained CMOS inverter based on a SiGe virtual substrate. Test results indicated that the strained CMOS converter had a drain leakage current much lower than the Si devices, and the device exhibited wonderful on/off-state voltage transmission characteristics.
出处 《Journal of Semiconductors》 EI CAS CSCD 2012年第9期65-68,共4页 半导体学报(英文版)
基金 supposed by the National Basic Research Program of China supposed by the State Key Laboratory of Electronic Thin Films and Integrated Devices,UESTC the Science and Technology on Analog Integrated Circuit Laboratory,CETC
关键词 CMOS inverter strained Si mobility enhancement SiGe virtual substrate relaxed layer CMOS inverter strained Si mobility enhancement SiGe virtual substrate relaxed layer
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