摘要
A fully integrated multi-mode multi-band directed-conversion radio frequency （RF） receiver front-end for a TD-SCDMA/LTE/LTE-advanced is presented. The front-end employs direct-conversion design, and consists of two differential tunable low noise amplifiers （LNA）, a quadrature mixer, and two intermediate frequency （IF） amplifiers. The two independent tunable LNAs are used to cover all the four frequency bands, achieving sufficient low noise and high gain performance with low power consumption. Switched capacitor arrays perform a resonant frequency point calibration for the LNAs. The two LNAs are combined at the driver stage of the mixer, which employs a folded double balanced Gilbert structure, and utilizes PMOS transistors as local oscillator （LO） switches to reduce flicker noise. The front-end has three gain modes to obtain a higher dynamic range. Frequency band selection and mode of configuration is realized by an on-chip serial peripheral interface （SPI） module. The front- end is fabricated in a TSMC 0.18-μm RF CMOS process and occupies an area of 1.3 mm2. The measured double- sideband （DSB） noise figure is below 3.5 dB and the conversion gain is over 43 dB at all of the frequency bands. The total current consumption is 31 mA from a 1.8-V supply.
A fully integrated multi-mode multi-band directed-conversion radio frequency （RF） receiver front-end for a TD-SCDMA/LTE/LTE-advanced is presented. The front-end employs direct-conversion design, and consists of two differential tunable low noise amplifiers （LNA）, a quadrature mixer, and two intermediate frequency （IF） amplifiers. The two independent tunable LNAs are used to cover all the four frequency bands, achieving sufficient low noise and high gain performance with low power consumption. Switched capacitor arrays perform a resonant frequency point calibration for the LNAs. The two LNAs are combined at the driver stage of the mixer, which employs a folded double balanced Gilbert structure, and utilizes PMOS transistors as local oscillator （LO） switches to reduce flicker noise. The front-end has three gain modes to obtain a higher dynamic range. Frequency band selection and mode of configuration is realized by an on-chip serial peripheral interface （SPI） module. The front- end is fabricated in a TSMC 0.18-μm RF CMOS process and occupies an area of 1.3 mm2. The measured double- sideband （DSB） noise figure is below 3.5 dB and the conversion gain is over 43 dB at all of the frequency bands. The total current consumption is 31 mA from a 1.8-V supply.
基金
supported by the National Science and Technology Major Projects of China(Nos.2011ZX03004-001-02,2010ZX03007-001-03)
